Non-volatile bistability effect based on electrically controlled phase transition in scaled magnetic semiconductor nanostructures

We explore the bistability effect in a dimensionally scaled semiconductor nanostruncture consisting of a diluted magnetic semiconductor quantum dot (QD) and a reservoir of itinerant holes separated by a barrier. The bistability stems from the magnetic phase transition in the QD mediated by the changes in the hole population. Our calculation shows that when properly designed, the thermodynamic equilibrium of the scaled structure can be achieved at two different configurations; i.e., the one with the QD in a ferromagnetic state with a sufficient number of holes and the other with the depopulated QD in a paramagnetic state. Subsequently, the parameter window suitable for this bistability formation is discussed along with the the conditions for the maximum robustness/non-volatility. To examine the issue of scaling, an estimation of the bistabiity lifetime is made by considering the thermal fluctuation in the QD hole population via the spontaneous transitions. A numerical evaluation is carried out for a typical carrier-mediated magnetic semiconductor (e.g., GaMnAs) as well as for a hypothetical case of high Curie temperature for potential room temperature operation.Comment: 9 pages, 7 figure

Re-entrant ferromagnetism in a generic class of diluted magnetic semiconductors

Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three ferromagnetic transition temperatures, T_1 > T_2 > T_3, with two distinct ferromagnetic regimes existing for T_1 > T > T_2 and T < T_3. Such an intriguing re-entrant ferromagnetism, with a paramagnetic phase (T_2 > T > T_3) between two ferromagnetic phases, arises from a subtle competition between indirect exchange induced by thermally activated carriers in an otherwise empty conduction band versus the exchange coupling existing in the impurity band due to the bound carriers themselves. We comment on the possibility of observing such a re-entrance phenomenon in diluted magnetic semiconductors and magnetic oxides.Comment: 4 pages, 3 figure

Theory of High-Tc Superconductivity: Accurate Predictions of Tc

The superconducting transition temperatures of high-Tc compounds based on copper, iron, ruthenium and certain organic molecules are discovered to be dependent on bond lengths, ionic valences, and Coulomb coupling between electronic bands in adjacent, spatially separated layers [1]. Optimal transition temperature, denoted as T_c0, is given by the universal expression $k_BT_c0 = e^2 \Lambda / \ell\zeta$; $\ell$ is the spacing between interacting charges within the layers, \zeta is the distance between interacting layers and \Lambda is a universal constant, equal to about twice the reduced electron Compton wavelength (suggesting that Compton scattering plays a role in pairing). Non-optimum compounds in which sample degradation is evident typically exhibit Tc < T_c0. For the 31+ optimum compounds tested, the theoretical and experimental T_c0 agree statistically to within +/- 1.4 K. The elemental high Tc building block comprises two adjacent and spatially separated charge layers; the factor e^2/\zeta arises from Coulomb forces between them. The theoretical charge structure representing a room-temperature superconductor is also presented.Comment: 7 pages 5 references, 6 figures 1 tabl

Vortex avalanches and magnetic flux fragmentation in superconductors

We report results of numerical simulations of non isothermal dendritic flux penetration in type-II superconductors. We propose a generic mechanism of dynamic branching of a propagating hotspot of a flux flow/normal state triggered by a local heat pulse. The branching occurs when the flux hotspot reflects from inhomogeneities or the boundary on which magnetization currents either vanish, or change direction. Then the hotspot undergoes a cascade of successive splittings, giving rise to a dissipative dendritic-type flux structure. This dynamic state eventually cools down, turning into a frozen multi-filamentary pattern of magnetization currents.Comment: 4 pages, 4 figures, accepted to Phys. Rev. Let

Short-Wave Excitations in Non-Local Gross-Pitaevskii Model

It is shown, that a non-local form of the Gross-Pitaevskii equation allows to describe not only the long-wave excitations, but also the short-wave ones in the systems with Bose-condensate. At given parameter values, the excitation spectrum mimics the Landau spectrum of quasi-particle excitations in superfluid Helium with roton minimum. The excitation wavelength, at which the roton minimum exists, is close to the inter-particle interaction range. It is shown, that the existence domain of the spectrum with a roton minimum is reduced, if one accounts for an inter-particle attraction.Comment: 5 pages, 5 figures, UJP style; presented at Bogolyubov Kyiv Conference "Modern Problems of Theoretical and Mathematical Physics", September 15-18, 200

Mechanisms of limitation and nature of field dependence of critical current in HTS epitaxial YBaCuO films

Magnetic field and temperature dependencies of the critical current density, J/sub c/(H/spl par/c, T) were measured by SQUID-magnetometry, ac magnetic susceptibility, and dc transport current techniques in the single-crystalline epitaxially-grown by off-axis dc magnetron sputtering YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) films with J/sub c/(H/spl par/c, 77 K) /spl ges/ 2 /spl middot/ 10/sup 6/ A/cm/sup 2/. The mechanism of vortex depinning from growth-induced linear defects, i.e., out-of-plane edge dislocations in low-angle tilt domain boundaries, is shown to describe quantitatively measured J/sub c/(H/spl par/c, T). The developed model takes into account a statistical distribution of the dislocation domain boundaries ordered in a network as well as the interdislocation spacing within boundaries. Actual structural features of YBCO film known from HREM data turn out to be extracted from J/sub c/(H/spl par/c, T)-curves by a fitting procedure within the proposed model